zii.s u l/-\oauei, one.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor TIP3055 description ? excellent safe operating area ? dc current gain- : hfe=20-70@lc = 4a ? collector-emitter saturation voltage- :vce silicon npn power transistors TIP3055 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vbe(oh) iceo icer icev iebo hpe-1 hfe-2 is/b fi parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain second breakdown collector current with base forward biased current-gain ? bandwidth product conditions lc=30ma;lb=0 ic=4a;ib=0.4a ic=10a;ib=3.3a lc= 4a ; vce= 4v vce= 30v; ib=0 vce=70v;rbe=100q vce=100v;vbe(off)=1.5v veb= tv; lc= 0 lc= 4a ; vce= 4v lc=10a;vce=4v vce= 30v,t= 1 .os.nonrepetitive lc= 0.5a ; vce= 10v;ftest= 1 ,0mhz win 60 20 5 3.0 2.5 max 1.1 3.0 1.8 0.7 1.0 5.0 5.0 70 unit v v v v ma ma ma ma a mhz hfe-ic characteristics 1000 .c c (u ?z 100 d> ? d q 10 ^h &? ?4 ?1 1 v t - ce j = = 4.0 26 c !s^ ; s s s \ safe operating area 100 50 m < 20 tr ? to s^ i 3.0 32." 5 1.0 * [1$ 0,3 0 0.2 0.1 = s s. - ac ? = tl mm i i secondary breakdown limit bonding wire li mit rhermallimit@tc = 25 c j-1 xf:< a s'< s> ^ -*? ^m x 00 m h y m. _ . 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 collector current lc[a] 7.0 10 20 4.0 6.0 10 20 40 60 collector-emitter voltage vce[v]
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